High-Voltage Microelectronics

GNS is currently developing various generation high-voltage mixed-signal integrated systems from 0.35 to 0.18 µm. Some of the features are listed blow:   

• 3.3V low-voltage devices

• 7.5V high-voltage devices (symmetric and asymmetric HV CMOS)

• 18V high-voltage devices (symmetric and asymmetric HV CMOS)

• 40V high-voltage devices (symmetric and asymmetric HV CMOS)

• 200-600V high-voltage devices (symmetric and asymmetric HV CMOS)