• Low temperature large area microelectronics
   

Low temperature large area microelectronics have attracted increasing attention for complementing the high-performance yet expensive silicon VLSI’s, such as amorphous thin film transistors (a-Si TFTs) and organic thin film transistors (OTFTs). They can be built on silicon and a variety of other mechanically flexible, shock-resistant, thin, lightweight substrates, and are thus expected to be ultra-low in cost even for large area integrated circuits and systems. Carrier mobility of a-Si TFTs and OTFTs is about two or three orders of magnitude lower than crystalline silicon, and the resultant circuit is slow in speed. The slow speed may not fit for video and RF applications. The GNS research and development team seeks ways of design and integration to achieve high performance of TFTs such as low temperature crystalline silicon TFT integrated circuit technology and to apply it to a variety of large-area applications on thin, lightweight, flexible, and cheap substrates, such as for active matrix display and wireless sensing networks.